| Autor: |
Hao-Ran Zhu, Wei-Feng Xie, null Xin-Liu, Yang Liu, Jinli Zhang, Xu Zuo |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Chinese Physics B. |
| ISSN: |
1674-1056 |
| DOI: |
10.1088/1674-1056/ac9fc2 |
| Popis: |
Defects have a significant impact on the performance of semiconductor devices. By using the first-principles combined with one-dimensional static coupling theory approach, we have calculated the variation of carrier capture coefficients with temperature for the interfacial defects $\textit{P}_{b0}$ and $\textit{P}_{b1}$ in amorphous-SiO$_2$/Si(100) interface}. It is found that the geometrical shape of $\textit{P}_{b0}$ and $\textit{P}_{b1}$ defects undergo large deformations after capturing carriers to form charged defects, especially for the Si atoms containing a dangling bond. The hole capture coefficients of neutral $\textit{P}_{b0}$ and $\textit{P}_{b1}$ defects are largest than the other capture coefficients, indicating that these defects have a higher probability of forming positively charged centres. Meanwhile, the calculated results of non-radiative recombination coefficient of these defects show that both $\textit{P}_{b0}$ and $\textit{P}_{b1}$ defects are the dominant non-radiative recombination centers in the interface of a-SiO$_2$/Si(100). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
