Autor: |
H. Scherrer, T. Caillat, M. Carle, C. Lahalle-Gravier, S. Scherrer |
Rok vydání: |
1995 |
Předmět: |
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Zdroj: |
Journal of Physics and Chemistry of Solids. 56:195-199 |
ISSN: |
0022-3697 |
DOI: |
10.1016/0022-3697(94)00165-0 |
Popis: |
Bi 2 (Te 1− x Se x ) 3 single crystal solid solutions with x = 0.025 and x = 0.05 have been grown using the travelling heater method. The first step of this work was the study of the BiTeSe ternary phase diagram on the Bi 2 Te 3 -rich side and with excess tellurium. The isoconcentration lines for these two compositions have been determined for temperatures ranging from 550 °C to their melting points. The knowledge of this phase diagram allows us to grow homogeneous ingots of high crystalline quality. The solidus line on the Te-rich side for these compositions has been determined by Hall effect measurements. This study shows that it is possible to grow thermodynamically well-defined single crystals in a reproducible way. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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