Elevated Temperature n+-p Hg0.8Cd0.2Te Photodiodes For Moderate Bandwidth Infrared Heterodyne Applications

Autor:	M. B. Reine, J.F. Shanley, C. T. Flanagan
Rok vydání:	1980
Předmět:	Heterodyne Materials science Infrared business.industry Optical engineering Bandwidth (signal processing) chemistry.chemical_element Photodiode law.invention Optics Ion implantation chemistry law Optoelectronics Quantum efficiency business Boron
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
Popis:	This paper presents the results of the first CO2 laser heterodyne measurements performed on boron implanted n+-p Hg0.8Cd0.2Te photodiodes. The measured data shows that this type of device structure is capable, of achieving bandwidths -20 of approximately 475 to 725 MHz and noise equivalent powers of 3.2 x 10-20 at 77 K and 1.0 x 10-19 W/Hz at 145 K.© (1980) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::37c70da03e1ecb47eb91e52f1eec1c4a https://doi.org/10.1117/12.958754 Zobrazit plný text záznamu