Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films
| Autor: | Sven Kirbach, C. Mart, Malte Czernohorsky, Wenke Weinreich, Maximilian Lederer, Sophia Eßlinger, T. Wallmersperger |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Doping Relative permittivity 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Piezoelectricity Phase (matter) 0103 physical sciences Thin film 0210 nano-technology Polarization (electrochemistry) Stoichiometry |
| Zdroj: | Applied Physics Letters. 118:012904 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0026990 |
| Popis: | Piezoelectric thin films are of current interest in science and industry for highly integrated nano-electro-mechanical-systems and sensor devices. In this study, the dependence of the piezoelectric properties on the doping concentration in Si:HfO2 thin films and their crystallographic origin are investigated. The Si:HfO2 films with a thickness of 20 nm and various Si doping concentrations in the range of 2.7–5.6 cat.% were examined. The relationship between the piezoelectric displacement and remanent polarization is studied during wake-up from the antiferroelectric-like pristine state until the cycled ferroelectric state, which reveals an application-dependent optimal doping concentration. Furthermore, the piezoelectric and ferroelectric properties, as well as the relative permittivity, were measured over wake-up, thus giving a glimpse at the underlying mechanism of the transition from a pristine antiferroelectric-like behavior to a ferroelectric/piezoelectric one, revealing a pre-existing polar phase that is reorienting during wake-up. The studied samples show a strong displacement and polarization dependence on the doping concentration. Hence, the stoichiometry is an excellent parameter for the application-specific adjustment of complementary metal–oxide–semiconductor compatible piezoelectric thin films. |
| Databáze: | OpenAIRE |
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