Quantum effects in silicon-germanium p-type heterostructures with quantum wells of different widths

Autor:	I. B. Berkutov, V. V. Andrievskii, E. Yu. Beliayev, Yu. A. Kolesnichenko
Rok vydání:	2023
Předmět:	Physics and Astronomy (miscellaneous) General Physics and Astronomy
Zdroj:	Low Temperature Physics. 49:59-70
ISSN:	1090-6517 1063-777X
DOI:	10.1063/10.0016476
Popis:	The magneto-quantum and quantum interference effects in a two-dimensional gas of p-type charge carriers are studied for three quantum wells made of practically pure germanium in a Si0.6Ge0.4/Si0.2Ge0.8/Si0.6Ge0.4 heterostructure. The quantum well widths were 8 nm for sample I, 19.5 nm for sample II, and 25.6 nm for sample III. The dependences of resistance on the magnetic field for all samples exhibit Shubnikov–de Haas oscillations. Their analysis made it possible to calculate the kinetic characteristics of charge carriers for the cases of one (sample I) and two occupied subbands (samples II and III). In the region of weak magnetic fields ( B
Databáze:	OpenAIRE
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