Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn3Se5 Bulk Compounds
| Autor: | Dayane Habib, Georges El Haj Moussa |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Photoluminescence Band gap Chalcopyrite Photoconductivity Analytical chemistry 02 engineering and technology Conductivity Stannite engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Vacancy defect visual_art 0103 physical sciences X-ray crystallography visual_art.visual_art_medium engineering 010306 general physics 0210 nano-technology |
| Zdroj: | World Journal of Condensed Matter Physics. :111-122 |
| ISSN: | 2160-6927 2160-6919 |
| Popis: | Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn3Se5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum. |
| Databáze: | OpenAIRE |
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