Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
| Autor: | Andreas Mandelis, Alexander Melnikov, Robert H. Pagliaro, Qi Ming Sun |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Surface (mathematics) Heterodyne Recombination velocity Materials science Quantitative imaging business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0103 physical sciences Optoelectronics General Materials Science Wafer 0210 nano-technology business |
| Zdroj: | Solid State Phenomena. 282:13-18 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.282.13 |
| Popis: | Surface electronic quality of wet-cleaned Si wafers was characterized quantitatively and all-optically via spatially-resolved surface recombination velocity (SRV) imaging using InGaAs-camera-based dynamic heterodyne lock-in carrierography. Six samples undergone four different hydrofluoric special-solution etching conditions were tested, their SRV distributions at different queue times after the hydrogen passivation processes were obtained, and a quantitative assessment of their surface electronic quality was made based on the evolution behavior of globally-integrated information from the SRV images. The data acquisition time for an SRV image with full camera pixel resolution was about 3 min. The methodology introduced here is promising for in-line nondestructive testing/evaluation and quality control at different fabrication/manufacturing stages in the electronic industry. Keywords: heterodyne lock-in carrierography, surface recombination velocity, quantitative imaging, HF etching, Si wafers |
| Databáze: | OpenAIRE |
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