Low-noise MMIC performance in Kaband using ion implantation technology

Autor:	J.P. Mondal, Stan E. Swirhun, T. Contolatis, Vladimir Sokolov, J. Geddes
Rok vydání:	1991
Předmět:	Engineering business.industry Electrical engineering Integrated circuit Noise figure law.invention Low noise Ion implantation law Ka band business Electromagnetic noise Monolithic microwave integrated circuit Volume (compression)
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.44510
Popis:	The progress made in producing low noise MMICs in Ka-band using an ion-implantation technology is reviewed. The technology is characterized by 3.8 dB noise figure with 14-16 dB gain and is suitable for high volume applications where the cost is to be kept low.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::37883d352396f5e6a639821ca297e307 https://doi.org/10.1117/12.44510 Zobrazit plný text záznamu