Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications
| Autor: | C.A. Billman, Sanghun Jeon, F. J. Walker, Hyunsang Hwang, Rodney A. McKee |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Gate dielectric Charge density chemistry.chemical_element Equivalent oxide thickness Epitaxy Electronic Optical and Magnetic Materials Semiconductor chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business Forming gas Molecular beam epitaxy |
| Zdroj: | IEEE Electron Device Letters. 24:218-220 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2003.810886 |
| Popis: | We have found excellent electrical characteristics of epitaxially grown SrTiO/sub 3/ by molecular beam epitaxy (MBE) for silicon metal-insulator-semiconductor (MIS) gate dielectric application. For thin SrTiO/sub 3/ film, the equivalent oxide thickness (EOT) and leakage current density was 5.4 /spl Aring/ and 7 /spl times/ 10/sup -4/ A/cm/sup 2/ (@V/sub g/ = V/sub fb/ - 1 V), respectively. In addition, the dispersion and hysteresis characteristics were negligible. As-deposited samples show relatively high fixed oxide charge density and interface state density, but both of these characteristics are substantially reduced by an optimizing low temperature (< 450 /spl deg/C) post-metal forming gas anneal (FGA). |
| Databáze: | OpenAIRE |
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