Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
| Autor: | Alexander Usikov, Alexander Kvasov, Michael A. Reshchikov, T. McMullen, Vladimir A. Dmitriev, Vitali Soukhoveev, Marilyn F. Bishop |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Photoluminescence business.industry Orders of magnitude (temperature) Drop (liquid) Rate equation Nitride Condensed Matter Physics Molecular physics Ray Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Optoelectronics business Luminescence Intensity (heat transfer) |
| Zdroj: | Physical Review B. 84 |
| ISSN: | 1550-235X 1098-0121 |
| Popis: | Tunable and abrupt thermal quenching of photoluminescence by increasing temperature has been observed for the blue band in high-resistivity Zn-doped GaN. The photoluminescence intensity dropped by several orders of magnitude within a few Kelvins, and the temperature at which that drop occurred could be tuned by changing the incident light intensity. Modeling the system with rate equations for competing electron-hole recombination flows through three defect species, one of which is a nonradiative deep donor, gives results consistent with these observations. |
| Databáze: | OpenAIRE |
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