Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga, Mn)As Dilute Magnetic Semiconductors
| Autor: | R. Patel, Kartik Ghosh, Sanjay R. Mishra, James G. Broerman, Mohammad Arif, Ted Kehl |
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| Rok vydání: | 2004 |
| Předmět: |
Condensed Matter::Materials Science
Materials science Magnetoresistance Condensed matter physics Ferromagnetism Annealing (metallurgy) Hall effect Transition temperature Field dependence Condensed Matter::Strongly Correlated Electrons Magnetic semiconductor Conductivity Condensed Matter::Mesoscopic Systems and Quantum Hall Effect |
| Zdroj: | MRS Proceedings. 831 |
| ISSN: | 1946-4274 0272-9172 |
| DOI: | 10.1557/proc-831-e3.21 |
| Popis: | In this paper we report the effect of low temperature annealing on the high field magnetotransport properties of epitaxial thin films of (Ga, Mn)As Dilute Magnetic Semiconductor (DMS) with low concentration (1.5 %) of Mn doping, which results in a ferromagnetic insulator. Annealing at an optimal temperature enhances the conductivity, carrier concentration, and ferromagnetic transition temperature. The field dependence of magnetoresistance is different below and above the ferromagnetic transition temperature. An attempt is made to analyze the data using a theoretical model proposed by Kaminski and Das Sarma [1]. |
| Databáze: | OpenAIRE |
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