| Autor: |
James E. Dunn, Thomas Kessler, Peter B. Gray, R. Camillo-Castillo, D. L. Harame, Peng Cheng, Jeffrey P. Gambino, Vibhor Jain, Pekarik John J, Panglijen Candra |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| Popis: |
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with fT/fMAX of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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