Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
| Autor: | Ch Liu, P G Eliseev, Marek Osinski, Hongjun Cao |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Condensed matter physics Physics::Optics Statistical and Nonlinear Physics Laser Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention Blueshift law Quantum dot laser Quantum dot Electrical and Electronic Engineering Atomic physics Quantum well Diode |
| Zdroj: | Quantum Electronics. 35:787-790 |
| ISSN: | 1468-4799 1063-7818 |
| Popis: | Mode-beating spectra and their current and temperature dependences are studied in a semiconductor laser. In the mode-beating spectrum of InGaAs quantum well lasers, the anomalous splitting of the difference-frequency line into three components f0, f+ and f- is observed. The splitting increases with increasing optical power above the threshold. The component f0 is less mobile and shifts to the red with increasing temperature. The component f+ shifts to the blue, whereas the weak f0 component shifts to the red. The difference f+-f0 amounts to 400 MHz, which is ~5% of the value of f0 in a 5-mm long diode cavity. No anomalous splitting was observed in quantum dot lasers. |
| Databáze: | OpenAIRE |
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