Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate
| Autor: | Annie Kumar, Daosheng Li, Gengchiau Liang, Kian Hua Tan, Satrio Wicaksono, Yee-Chia Yeo, Wan Khai Loke, Dimitri A. Antoniadis, Xiao Gong, Sachin Yadav, Soon Fatt Yoon, Shuh-Ying Lee |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Integrated circuit Epitaxy Laser 01 natural sciences law.invention Semiconductor laser theory 010309 optics Laser linewidth chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics business Quantum well Indium gallium arsenide |
| Zdroj: | 2017 Symposium on VLSI Technology. |
| DOI: | 10.23919/vlsit.2017.7998199 |
| Popis: | We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with I on /I off ratio of more than 106 and very low off-state leakage current were realized. In addition, fabrication process with a low overall processing temperature (≤ 400 °C) was used to realize electrically-pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm and a linewidth of less than 0.5 nm at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|