Optical and Electrical Properties of Electron Beam Crystallised Thin Film Silicon Solar Cells on Glass Substrates
| Autor: | Amkreutz, D., Müller, J., Schmidt, M., Haschke, J., Hänel, T., Schulze, T.F. |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| DOI: | 10.4229/24theupvsec2009-3av.1.9 |
| Popis: | 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2506-2509 Polycrystalline silicon on glass has been prepared by zone melting crystallization of 7-15 μm thick amorphous/nano-crystalline silicon layers with a line shaped electron beam. Silicon was deposited onto glass substrates, covered by SiC/SiC:B-layers, which act as adhesive layer and barrier against impurity diffusion. Si crystallites are grown ranging from several 100μm up to cm in length. A 30 nm thin a-Si:H(n) emitter deposited by PECVD and covered with an 80 nm ZnO layer and an Al grid completes the solar cell structure glass/SiC/poly-Si/a-Si:H/ZnO/Al. In the planar cell without any light trapping and without post annealing, open circuit voltages of 487mV, short circuit currents up to 12.6mA·cm-2 and a fill factor of 63% resulting in 3.5% efficiency have been obtained. |
| Databáze: | OpenAIRE |
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