High-Throughput Nanogap Formation Using Single Ramp Feedback Control

Autor:	Abhishek Sundararajan, Stephen L. Johnson, A. T. C. Johnson, Douglas R. Strachan, David Patrick Hunley
Rok vydání:	2011
Předmět:	Materials science Thermal runaway business.industry Feedback control Voltage clamp Electrical engineering Molecular electronics Electromigration Computer Science Applications Nanoelectronics Electrical and Electronic Engineering business Throughput (business) Voltage
Zdroj:	IEEE Transactions on Nanotechnology. 10:806-809
ISSN:	1941-0085 1536-125X
DOI:	10.1109/tnano.2010.2080283
Popis:	We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::37589d7e0dff1d1295aebf53cb4a622b https://doi.org/10.1109/tnano.2010.2080283 Zobrazit plný text záznamu