Ambipolar Photocarrier Doping and Transport in Monolayer WS₂ by Forming a Graphene/WS₂/Quantum Dots Heterostructure
| Autor: | Chunyu Zhao, Kei May Lau, Guanghui Cheng, Jiannong Wang, Zijing Jin, Baikui Li |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Graphene business.industry Ambipolar diffusion Photoconductivity Doping Heterojunction 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Quantum dot 0103 physical sciences Electrode Monolayer Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 42:371-374 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | In this work, we demonstrated that ${p}$ -type and ${n}$ -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping. |
| Databáze: | OpenAIRE |
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