Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films
| Autor: | D. Woodbury, R. K. Lowry, J.J. Mele, Patrick M. Lenahan |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
inorganic chemicals
Materials science Silicon business.industry technology industry and agriculture Dangling bond Nanocrystalline silicon chemistry.chemical_element Strained silicon equipment and supplies Condensed Matter Physics complex mixtures Electronic Optical and Magnetic Materials stomatognathic diseases Nuclear magnetic resonance chemistry Electric field Materials Chemistry Ceramics and Composites Optoelectronics Thin film business Current density Leakage (electronics) |
| Zdroj: | Journal of Non-Crystalline Solids. :835-839 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(99)00851-0 |
| Popis: | We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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