Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
| Autor: | Abdesselam Hocini, Souheil Mouetsi, Abdelali Diabi, D. Khedrouche |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nanotube Materials science business.industry Schottky barrier Oxide Nanotechnology 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Carbon nanotube field-effect transistor chemistry.chemical_compound chemistry Modeling and Simulation 0103 physical sciences Optoelectronics Rectangular potential barrier Static performance Electrical and Electronic Engineering 0210 nano-technology business Voltage |
| Zdroj: | Journal of Computational Electronics. 16:593-600 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-017-0996-5 |
| Popis: | The performance of a Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) has been analyzed by means of a compact model. We present a study of the physical and geometrical parameters and their effects on the static and dynamic performance of the SB-CNTFET. For the static regime, we determine the variations in the current–voltage characteristics for three values of the potential barrier and the influence of the barrier on the on-state current. Also, we report the effect of the oxide thickness on the static performance. The relationship between the current–voltage characteristics and the nanotube diameter for different values of drain–source voltage is investigated. For dynamic systems, we study the effect of the gate–source voltage, the chirality and the CNT diameter on the transition frequency. It has been observed that the performance of the SB-CNTFET can be significantly controlled by changing some physical and geometrical parameters of the device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink