Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells
| Autor: | V. Siva, I. Kuzma-Filipek, Patrick Choulat, Filip Duerinckx, Richard Russell, Ruiying Hao, Jean Vatus, Loic Tous, Monica Aleman, T.S. Ravi, Aashish Sharma, Maria Recaman-Payo, Emanuele Cornagliotti, Jozef Szlufcik, Jef Poortmans, A. Uruena |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Crystal Ion implantation Solar cell efficiency 0103 physical sciences Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Common emitter |
| Zdroj: | IEEE Journal of Photovoltaics. 6:1451-1455 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2016.2601945 |
| Popis: | This paper proposes a kerfless wafer structure with built-in p-n junctions in n-type silicon wafers grown using Crystal Solar's high throughput epitaxy technology. Compared with a conventional p-type emitter by boron diffusion, ion implantation, or epitaxy, the built-in p-type emitter has a reduced and uniform doping concentration and increased thickness. The epitaxially grown wafers and conventional Czochralski (CZ) n-type wafers were processed into solar cells. A best efficiency of 22.5% with epitaxially grown wafers was achieved, with a 6 mV gain in open-circuit voltage, suggesting a high wafer quality and superiority of the deep epitaxial emitter over a standard boron-diffused emitter. Substrate reuse associated with the kerfless epitaxy technology is studied as well, with respect to its impact on solar cell efficiency. The data suggest no degradation in cell efficiency due to substrate reuse. |
| Databáze: | OpenAIRE |
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