Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics
| Autor: | Pen Chang, M. L. Huang, Shao-Yun Wu, Minghwei Hong, Kang-Hua Wu, Tsung-Da Lin, Wen-Hsin Chang, J. Kwo, Han-Chin Chiu |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Transconductance Gate dielectric General Engineering Analytical chemistry General Physics and Astronomy Dielectric Metal X-ray photoelectron spectroscopy visual_art Density of states visual_art.visual_art_medium Optoelectronics Field-effect transistor business |
| Zdroj: | Applied Physics Express. 4:114202 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | In-situ ultrahigh-vacuum-deposited Y2O3 2–3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8–9)×1011 eV-1 cm-2 near the midgap has been measured using the conductance method. The strong Y2O3/InGaAs interfacial bonding, revealed using X-ray photoelectron spectroscopy, enables attainment of an atomically smooth interface with 750 °C annealing. Low subthreshold swing of 97 mV/decade, high drain current of 1.5 mA/µm, high transconductance of 0.77 mS/µm, and field-effect mobility of 2,100 cm2 V-1 s-1 were achieved in a self-aligned inversion-channel InGaAs metal–oxide–semiconductor field-effect-transistor of 1 µm gate length. |
| Databáze: | OpenAIRE |
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