Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition

Autor:	J. E. Epler, M. G. Craford, M. D. Camras, G. A. Herrmannsfeldt, M. J. Peanasky, Nick Holonyak, C. H. Wu, R. W. Kaliski, F. G. Kellert, M. J. Tsai, H. G. Drickamer
Rok vydání:	1985
Předmět:	Materials science business.industry General Physics and Astronomy Heterojunction Chemical vapor deposition Double heterostructure Epitaxy law.invention law Optoelectronics Light emission business Electronic band structure Diode Light-emitting diode
Zdroj:	Journal of Applied Physics. 57:1734-1738
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.334446
Popis:	High‐pressure studies on high quality AlxGa1−xAs double heterostructure light emitting diodes (LEDs) grown by liquid phase epitaxy (LPE) are presented. The AlxGa1−xAs active region varies in composition from x∼0.25 to x∼0.53, i.e., through the important region of the direct‐indirect crossover (x≡xc≊0.45). The pressure coefficient of the Γ conduction band is observed to decrease (∼1 meV/kbar for x∼0.25 to x∼0.53) with increasing Al concentration, which is in accord with alloy disorder and band‐edge bowing. Indirect‐gap (X) recombination radiation of significant intensity is observed and provides evidence for the high quality of the LPE diodes. High‐pressure measurements, and the corresponding increase in energy of the direct band edge and decrease in the indirect band edge, show that the light emission is a strong function of the carrier distribution in the Γ and X conduction‐band minima. Comparison LEDs fabricated from a crystal (x∼0.37) grown by metalorganic chemical vapor deposition exhibit nearly simil...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::373cad8b8fc7a4e551bdd83518aa4496 https://doi.org/10.1063/1.334446 Zobrazit plný text záznamu