Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
| Autor: | I. V. Shtrom, I. P. Soshnikov, G. E. Cirlin, Rodion R. Reznik, A. I. Khrebtov, A. D. Bouravleuv, Yu. B. Samsonenko |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Wavelength range business.industry Nanowire chemistry.chemical_element 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Algaas gaas chemistry Quantum dot 0103 physical sciences Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Semiconductors. 50:1421-1424 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616110257 |
| Popis: | Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon. |
| Databáze: | OpenAIRE |
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