Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)
| Autor: | Claude Tabone, G. Le Carval, C. Le Royer, F. Mayer, Laurent Clavelier, Simon Deleonibus |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Subthreshold conduction Analytical chemistry Condensed Matter Physics Subthreshold slope Electronic Optical and Magnetic Materials Threshold voltage Impact ionization MOSFET Materials Chemistry Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Quantum tunnelling Voltage |
| Zdroj: | Solid-State Electronics. 51:579-584 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2007.02.015 |
| Popis: | Drift diffusion phenomena limits the subthreshold slope of conventional MOSFET to 60 mV/dec at room temperature. This paper deals with a new type of device, the Impact Ionization MOS (IMOS), which exhibits subthreshold slopes down to a few mV/dec. The electrical results of the fabricated IMOS are analysed and the scalability of this device is investigated thanks to TCAD simulations. The scaling of the dimensions allows a drastic reduction of the supply voltage and higher ON currents, but nanometer-large IMOS exhibit higher OFF current too due to Band-to-Band Tunnelling. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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