Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures

Autor:	Chang-Feng Yang, Chun-Yu Wu, Meng-Chun Shih, Ming-Ta Yang, Ming-Han Yang, Yu-Tien Wu, Ta-Chun Chien, Chih-Wei Lai, Shih-Chi Tsai, Wen-Ting Chu, Arthur Hung
Rok vydání:	2022
Zdroj:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
DOI:	10.1109/vlsitechnologyandcir46769.2022.9830374
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::372dc03dccfce994cdc87d5993ef6041 https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830374 Zobrazit plný text záznamu