Ambipolar organic field-effect transistor based on an organic heterostructure
| Autor: | Siegfried Karg, Constance Rost, Walter Rieß, David J. Gundlach |
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| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 95:5782-5787 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1702141 |
| Popis: | Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this article we show that by using a heterostructure with pentacene as hole-transport and N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3×10−3 and 1×10−4 cm2/V s, respectively. This device architecture serves as a model structure for ambipolar field-e... |
| Databáze: | OpenAIRE |
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