Approach for MVL design based on armchair graphene nanoribbon field effect transistor and arithmetic circuits design
| Autor: | Maryam Nayeri, Peiman Keshavarzian, Mahdieh Nayeri |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Physics Band gap Graphene Circuit design 020208 electrical & electronic engineering General Engineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Swing 01 natural sciences law.invention Threshold voltage law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Range (statistics) Electronic engineering Field-effect transistor Hardware_LOGICDESIGN Voltage |
| Zdroj: | Microelectronics Journal. 92:104599 |
| ISSN: | 0026-2692 |
| Popis: | This paper presents the approach for multiple-valued logic (MVL) design and implementing the arithmetic circuit based on armchair graphene nanoribbon field effect transistors (GNRFETs). For this purpose, the values of the threshold voltages are obtained for GNRFETs for utilizing in MVL. The Id-Vgs curve is drawn for all n-type GNRFETs by Synopsys HSPICE tools. Moreover, the width variations and band gap energy are scrutinized. The value of threshold voltage for range of N = 3p+1 is more than N = 3p. These observations exhibit that variation of the threshold voltages can be utilized for a circuit design based on GNRFET. Furthermore, the sub-threshold swing is obtained. As a proof of the concept, the ternary arithmetic circuits based on GNR are designed with 0.5 V supply voltage. The computational results confirm the threshold voltages values as well as the suitable figure of merits of using GNRFETs in multiple-valued logic circuit design. |
| Databáze: | OpenAIRE |
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