Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots
| Autor: | Zhao Ding, Jiemin Wei, Wang Yi, Xiang Guo, Zijiang Luo, Yang Chen, Jihong Wang |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Reflection high-energy electron diffraction business.industry General Physics and Astronomy 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences law.invention Electron diffraction Quantum dot law 0103 physical sciences Monolayer Surface roughness Optoelectronics General Materials Science Scanning tunneling microscope 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Current Applied Physics. 19:557-562 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2019.02.010 |
| Popis: | Influence of Ga(Al)As substrates on surface morphology of InGaAs quantum dots and critical thickness of In0.5Ga0.5As film grown by molecular beam epitaxy is investigated. The In0.5Ga0.5As quantum dots are grown on (001) surfaces of GaAs and Al0.25Ga0.75 A at 450 °C, scanning tunneling microscope images show that the size of quantum dots varied slightly for 10 ML of In0.5Ga0.5As grown on GaAs and Al0.25Ga0.75As surfaces. Reflection high energy electron diffraction (RHEED) is used to monitor the growth of 4 monolayers (ML) In0.5Ga0.5As on Al0.25Ga0.75As and GaAs surfaces during deposition. The critical thickness is theoretically calculated by adding energy caused by surface roughness and heat from substrate. The calculations show that the critical thickness of In0.5Ga0.5As grown on GaAs and Al0.25Ga0.75As are 3.2 ML and 3.8 ML, respectively. The theoretical calculation agrees with the experimental results. |
| Databáze: | OpenAIRE |
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