Nonlinear Diffusion in Excited HgCdTe and Si Crystals

Autor:	R. Purlys, Ž. Norgėla, A. J. Janavicius
Rok vydání:	2003
Předmět:	Surface diffusion Diffusion layer Materials science Ambipolar diffusion Excited state Lattice diffusion coefficient General Physics and Astronomy Grain boundary diffusion coefficient Effective diffusion coefficient Atomic physics Diffusion (business)
Zdroj:	Acta Physica Polonica A. 104:459-467
ISSN:	1898-794X 0587-4246
Popis:	We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::37123364bddc25c2b7b56dc62685a2e4 https://doi.org/10.12693/aphyspola.104.459 Zobrazit plný text záznamu