Mechanisms of laser action in epitaxial InAs subjected to electron beam excitation
| Autor: | E V Matveenko, I V Kryukova, V I Leskovich |
|---|---|
| Rok vydání: | 1979 |
| Předmět: |
Materials science
Auger effect General Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Acceptor Auger Semiconductor laser theory law.invention Condensed Matter::Materials Science symbols.namesake Impurity law Condensed Matter::Superconductivity symbols Condensed Matter::Strongly Correlated Electrons Physics::Atomic Physics Stimulated emission Atomic physics Excitation |
| Zdroj: | Soviet Journal of Quantum Electronics. 9:823-827 |
| ISSN: | 0049-1748 |
| DOI: | 10.1070/qe1979v009n07abeh009188 |
| Popis: | Investigations were made of the spectral and power characteristics of electron-beam-excited epitaxial InAs lasers as a function of the carrier density, excitation rate, and temperature (80–220°K). The main laser action channels were interband and shallow acceptor levels, transitions to impurity states giving the highest efficiency (up to 2%). It was found that the main mechanism which reduces the efficiency of these lasers is nonradiative interband and impurity Auger recombination of nonequilibrium carriers whose probability in this compound increases as a result of the participation of a spin-orbit-split valence subband in the Auger processes. |
| Databáze: | OpenAIRE |
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