Effects of radical oxygen O* in synthesis of Sr1−xNaxCuO2 infinite-layer thin film by reactive RF sputtering
| Autor: | Hiroshi Yamamoto, S.G Lee, N Sumitani, Nobunari Yoshiyama, T Takei |
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| Rok vydání: | 1998 |
| Předmět: |
Radical
Inorganic chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Atmospheric temperature range Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Tetragonal crystal system chemistry Sputtering law Phase (matter) Materials Chemistry Crystallization Thin film |
| Zdroj: | Thin Solid Films. 334:120-124 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)01129-8 |
| Popis: | An alternative reactive sputtering from SrCuO 2 and NaCuO 2 targets was adopted for a synthesis of an infinite-layer Sr 1− x Na x CuO 2 film. In a microwave cavity reactive oxygen gas was activated and generated much radicals O * . The substrate temperature range for the crystallization of the tetragonal phase was enlarged by using radicals O * . The tetragonal infinite-layer SrCuO 2 film showed the phase with the comparatively large c parameter. The infinite-layer structure with the small c parameter was the dominant tetragonal phase in the Sr 1− x Na x CuO 2 films. The analysis by XRD patterns showed that substitutions of Na atoms increased defects of oxygen in CuO 2 layers and resulted in a Sr-poor composition. It was confirmed that activated oxygen gas by microwave promotes more oxidation reactions during a film deposition than non-activated oxygen gas. © 1998 Elsevier Science S.A. All rights reserved. |
| Databáze: | OpenAIRE |
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