Impact of CO generation during the melting process on carbon concentration in Czochralski silicon
| Autor: | H. Matsumura, Y. Nagai, H. Tsubota |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon chemistry.chemical_element 02 engineering and technology Partial pressure Raw material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Chemical reaction Inorganic Chemistry chemistry.chemical_compound chemistry Chemical engineering 0103 physical sciences Materials Chemistry Graphite 0210 nano-technology Quadrupole mass analyzer Carbon Carbon monoxide |
| Zdroj: | Journal of Crystal Growth. 518:95-98 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2019.04.027 |
| Popis: | A new carbon contamination model in which carbon monoxide (CO) generated by the chemical reaction between H2O and graphite components during the heating stage can react with the solid-state silicon feedstock was proposed. The influence of CO on carbon concentration during the heating stage in a laboratory-scale Czochralski furnace was investigated using a quadrupole mass spectrometer. A strong peak of CO and H2O partial pressure was observed before the silicon feedstock began to melt. We believe that the purge tube is a major source of CO during the heating stage because carbon contamination of the order of 1016 occurred in the silicon melt by CO generated from the purge tube. Furthermore, we discussed the impact of the SiC film formed on the surface of the silicon feedstock on carbon contamination. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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