Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition
| Autor: | Uiho Choi, Jaeyeon Han, Byeongchan So, Kyeongjae Lee, Okhyun Nam, Taemyung Kwak, Taehoon Jang, Yongjun Nam |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Rocking curve Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ammonia chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Surface roughness Polar 0210 nano-technology Hillock |
| Zdroj: | Thin Solid Films. 675:148-152 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2019.01.049 |
| Popis: | In this study, the effect of NH3 pre-treatment is investigated to obtain high-quality nitrogen-polar GaN grown on a SiC substrate. The GaN/AlN/C-face 4° off-cut SiC structure is successfully grown with pre-treatment temperatures of 1250, 1300, and 1350 °C. The hillock and inversion domain density, surface roughness, and crystal quality of each sample were evaluated. As the temperature increased from 1250 °C to 1350 °C, the overall crystal quality of the N-polar GaN was greatly improved with reduced hillock and inversion domain densities and smoothed surface. The X-ray rocking curve full-width at half maximum of the (00-2) and (10-2) planes were 374 and 420 arcsec, respectively, for the pre-treatment of 1350 °C. |
| Databáze: | OpenAIRE |
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