Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2 after Gate Etching

Autor:	Miyako Matsui, Takafumi Tokunaga, Fumihiko Uchida, Hiroyuki Enomoto, Tadashi Umezawa
Rok vydání:	1999
Předmět:	Materials science X-ray photoelectron spectroscopy Low-energy ion scattering Etching (microfabrication) General Engineering Analytical chemistry General Physics and Astronomy Biasing Substrate (electronics) Spectroscopy Layer (electronics) Ion
Zdroj:	Japanese Journal of Applied Physics. 38:2124
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.38.2124
Popis:	The relationship between wafer-bias power during over-etching and structural damage induced in Si(100) substrate under ultrathin SiO2 layers by gate etching was examined by low-energy ion-scattering spectroscopy (LEIS) and high-resolution X-ray photoelectron spectroscopy. The crystal structure of the topmost surface of the Si substrate was modified when the residual SiO2 layer was 2.5 nm thick at a wafer-bias RF power of 70 W during over-etching. This structural damage was shown to be due to ions coming from plasma irradiation because the residual SiO2 thickness was close to the projected ion range at an ion energy of 310 eV (which was estimated from the Vpp of the bias voltage when the RF power was 70 W).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::36db4011a2838d836a44cf73793f9b48 https://doi.org/10.1143/jjap.38.2124 Zobrazit plný text záznamu