| Autor: |
J. Pape, Robert Katz, Y. Mamy Randriamihaja, B. Parameshwaran, T. Kirihata, William McMahon, Z. Chbili, Norman Robson, Darren L. Anand, Alberto Cestero, Subramanian S. Iyer, Moy Danny, Andreas Kerber |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
2017 IEEE International Reliability Physics Symposium (IRPS). |
| DOI: |
10.1109/irps.2017.7936386 |
| Popis: |
Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline monitoring of programmability and BD-risk reduction as a function of process changes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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