2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy

Autor:	P. K. York, Ramon U. Martinelli, R.J. Menna, Hao Lee, S. Y. Narayan, D. Garbuzov
Rok vydání:	1995
Předmět:	business.industry Infrared Chemistry Physics::Optics Atmospheric temperature range Condensed Matter Physics Laser Semiconductor laser theory law.invention Inorganic Chemistry Wavelength law Materials Chemistry Optoelectronics business Current density Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 150:1354-1357
ISSN:	0022-0248
Popis:	Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n+−GaSb(100) substrates by molecular beam epitaxy. The lasers exhibited a lasing wavelength of 2.78 μm and pulsed operation up to 60°C. Pulsed threshold current of 1.1 A, corresponding to a current density of 9.5 kA/cm2, and maximum output power of 30 mW have been achieved at 15°C for broad-area lasers. The characteristic temperature was 58 K over the temperature range of 0 to 40°C. This is the longest emission wavelength reported for quantum-well lasers operating at room temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::36b6d3dfd164db8ebd997433bb9baf2c https://doi.org/10.1016/0022-0248(95)80159-a Zobrazit plný text záznamu Full Text from ScienceDirect