Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
| Autor: | Sun Jin Yun, Jung Wook Lim, Jin Ho Lee |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
General Chemical Engineering Aluminum silicate Analytical chemistry Plasma law.invention Hysteresis Atomic layer deposition law Electrochemistry General Materials Science Leakage current density Electrical and Electronic Engineering Physical and Theoretical Chemistry Crystallization Layer (electronics) |
| Zdroj: | Electrochemical and Solid-State Letters. 9:F8 |
| ISSN: | 1099-0062 |
| Popis: | The electrical properties of aluminum silicate (AlSi x O y ) films grown at 120 and 150°C by plasma-enhanced atomic layer deposition were investigated for the application on flexible devices. AlSi x O y films with dielectricconstants of 5.6 and 6.8 exhibited a reduced hysteresis voltage in capacitance-voltage curves compared to Al 2 O 3 films, indicating an improved interfacial quality. The leakage current density for AlSi x O y is comparable to that for Al 2 O 3 . Moreover, the results indicate that the insertion of SiO layers suppresses the film crystallization and the formation of an interfacial layer. |
| Databáze: | OpenAIRE |
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