Saturation of Si atom concentration in Si planar‐doped InP layers grown by metalorganic chemical vapor deposition
| Autor: | Mikio Kamada, Toshiyuki Maruyama, Shiro Miwa, Hideto Ishikawa |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Silicon Inorganic chemistry Doping Analytical chemistry chemistry.chemical_element Chemical vapor deposition Volumetric flow rate Condensed Matter::Materials Science Ion implantation chemistry Condensed Matter::Superconductivity Desorption Condensed Matter::Strongly Correlated Electrons Metalorganic vapour phase epitaxy Saturation (chemistry) |
| Zdroj: | Applied Physics Letters. 58:851-853 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.104510 |
| Popis: | A mechanism which causes saturation in Si atom concentration in planar‐doped InP layers was investigated. The layers were grown by atmospheric metalorganic chemical vapor deposition (MOCVD) and planar doping was performed by supplying Si2H6 in PH3 atmosphere. We found that the sheet Si atom concentration of the layers saturated as a function of doping time. We propose a new model which can describe the saturation as competition between adsorption and desorption. This model will describe the doping time dependence and the PH3 flow rate dependence of sheet Si atom concentration of planar‐doped InP layers grown by MOCVD. |
| Databáze: | OpenAIRE |
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