Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor

Autor:	Jae-Hong Jeon, Jong-Hyun Seo, Kang-Woong Lee, Jaeheon Shin, Chi-Sun Hwang, HeeHwan Choe, Sang-Hee Ko Park
Rok vydání:	2008
Předmět:	Materials science chemistry business.industry Thin-film transistor General Physics and Astronomy Electrical stability chemistry.chemical_element Optoelectronics Zinc business Bias stress
Zdroj:	Journal of the Korean Physical Society. 53:412-415
ISSN:	0374-4884
DOI:	10.3938/jkps.53.412
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::36a64aa5cf6ead22bd8614bcdc40716c https://doi.org/10.3938/jkps.53.412 Zobrazit plný text záznamu