Conductivity Anisotropy in Epitaxial 6H and 4H Sic

Autor:	Gerry Negley, William J. Schaffer, John W. Palmour, K. G. Irvine
Rok vydání:	1994
Předmět:	Electron mobility Materials science Condensed matter physics Impurity Hall effect Electrical resistivity and conductivity Conductivity Atmospheric temperature range Anisotropy Bar (unit)
Zdroj:	MRS Proceedings. 339
ISSN:	1946-4274 0272-9172
Popis:	A measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K100) or (1120)surfaces having total impurity concentrations 1017-1018 cm-3. The observed mobility ratio for 4H is μ[1120]/[0001] and is independent of temperature. For 6H, the ratio μ[1100]/[0001] decreases from ∼6.2 at 80K to ∼5.0 at 150K and is essentially constant (∼4.8) above 200K. A donor level near 0.6 eV is occasionally observed in 4H which reduces the high temperature electron mobility and introduces an apparent temperature dependence to the mobility ratio if nonuniformly distributed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::36970171b6834918cfdf4a5a7b1e7313 https://doi.org/10.1557/proc-339-595 Zobrazit plný text záznamu Full text from SpringerLink