51.1: Amorphous Indium-Gallium-Zinc-Tin-Oxide TFTs with High Mobility and Reliability

Autor:	Chihyuan Tseng, Xiao-Wen Lv, Yi-Fan Wang, Shi-Min Ge, Su Chihyu, Yan-Hong Meng, Changcheng Lo, Hejing Zhang, Longqiang Shi, Wenhui Li, Tao Sun, Wen Shi, Alan. Lien
Rok vydání:	2015
Předmět:	Materials science business.industry chemistry.chemical_element Field effect Amorphous solid Zinc tin oxide Reliability (semiconductor) AMOLED chemistry Thin-film transistor Optoelectronics Gallium business Indium
Zdroj:	SID Symposium Digest of Technical Papers. 46:766-768
ISSN:	0097-966X
DOI:	10.1002/sdtp.10207
Popis:	A high-mobility amorphous Indium-Gallium-Zinc-Tin-Oxide (a-IGZTO) TFT was demonstrated. The new TFT achieved a large field effect mobility of ~24.7 cm2/Vs, which had a comparable reliability to the a-IGZO TFT. Furthermore, 4K×2K AMOLED TV addressed by the a-IGZTO TFT showed a good performance.
Databáze:	OpenAIRE
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