Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

Autor:	H. Hofsäss, Petra Reinke, Carsten Ronning, H. Feldermann, Peter Oelhafen
Rok vydání:	2000
Předmět:	Ion beam X-ray photoelectron spectroscopy Hydrogen Chemistry Etching (microfabrication) Electron energy loss spectroscopy Analytical chemistry General Physics and Astronomy chemistry.chemical_element Reactive-ion etching Ion beam-assisted deposition Electron spectroscopy
Zdroj:	Journal of Applied Physics. 88:5597-5604
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1320031
Popis:	In the present study nanocrystalline c-BN films deposited with a mass selected ion beam were subjected to a hydrogen plasma or atomic hydrogen produced by the hot filament method. Film composition and electronic properties of the surface were subsequently analyzed in situ by photoelectron spectroscopy in the x-ray and ultraviolet regime, and by electron energy loss spectroscopy. The sp2-bonded surface layer, which is native to ion beam deposited c-BN films, is rapidly removed by hydrogen plasma etching and the almost phase pure c-BN layer uncovered. Continuation of hydrogen plasma exposure leads to a removal of the c-BN layer at an etch rate of about 0.65 nm/min until finally the sp2-BN nucleation layer is detected. No preferential etching of either B or N is observed and an equal concentration of the constituents is maintained throughout the experiment. The large atomic hydrogen flux from the plasma is held responsible for the efficient etching, which could not be achieved with the hot filament method. T...
Databáze:	OpenAIRE
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