Application of Cr-less mask technology for sub-100nm gate with single exposure

Autor: Ji-Soong Park, Dong-Hoon Chung, Hye-Soo Shin, J. Fung Chen, Sung-Hyuck Kim, In-Kyun Shin, Jung-Min Sohn, Jae-Han Lee, Seong-Woon Choi, Douglas Van Den Broeke
Rok vydání: 2002
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.468097
Popis: Chrome Less phase lithography (CPL) may be the crucial technology to print 100nm node and below. CPL can apply to various design layers without causing phase conflicts, while phase edge phase shift mask (PEPSM) is beneficial for specific pattern configurations and pitches. Therefore, we tested the feasibility of CPL including phase grating and hybrid CPL. And we tested the two types of CPL such as mesa and trench structures to decide the proper shifter forming method. We evaluated pattern fidelity of CPL using simulation, aerial image measurement system (AIMS) and wafer printing. Finally, we will compare the optical performance between CPL and PEPSM for 100nm node SRAM gate.
Databáze: OpenAIRE