Direct Digital Synthesizer with 14 GS/s Sampling Rate Heterogeneously Integrated in InP HBT and GaN HEMT on CMOS
| Autor: | Joseph D. Cali, Gary M. Madison, Steven E. Turner, Matta John T, James M. Meredith, Lawrence J. Kushner, Richard L. Harwood, Mark E. Stuenkel, Steve A. Chadwick, Michael Oh, Justin A. Cartwright, Justin M. Byrd |
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| Rok vydání: | 2019 |
| Předmět: |
Spurious-free dynamic range
Materials science business.industry Heterojunction bipolar transistor 020208 electrical & electronic engineering dBc 020206 networking & telecommunications Gallium nitride 02 engineering and technology High-electron-mobility transistor chemistry.chemical_compound CMOS chemistry Direct digital synthesizer 0202 electrical engineering electronic engineering information engineering Indium phosphide Optoelectronics business |
| Zdroj: | 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| DOI: | 10.1109/rfic.2019.8701821 |
| Popis: | A 14 GS/s direct digital synthesizer (DDS) heterogeneously integrated with InP and GaN on CMOS is presented. The DDS includes over 6 million 45 nm CMOS FETs, 2151 InP HBTs, 2 GaN HEMTs, and 9930 heterogeneous interconnects, making it the most complex heterogeneously integrated mixed-signal circuit reported to date. By heterogeneously integrating multiple technologies, a high output power of 6.9 dBm is achieved while maintaining better than 37 dBc Nyquist SFDR and 8.7 W power consumption – performance currently unachievable with state-of-the-art single-technology approaches. |
| Databáze: | OpenAIRE |
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