p-n junctions in silicon nanowires
| Autor: | Raj Solanki, Yoshi Ono, John F. Conley, Gary Goncher, J. R. Carruthers |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silicon Solid-state physics business.industry Doping Nanowire chemistry.chemical_element Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Indium tin oxide chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Vapor–liquid–solid method business Diode DC bias |
| Zdroj: | Journal of Electronic Materials. 35:1509-1512 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-006-0140-y |
| Popis: | Silicon nanowires composed of p-n junctions have been grown on 2 × 5 cm glass substrates with a thin layer of indium tin oxide (ITO). These nanowires were grown both directly on ITO utilizing the vapor-solid (VS) method, as well as by vapor-liquid-solid (VLS) method, with a thin layer of gold as a catalyst. Current-voltage analyses show p-n diode characteristics in both cases. When a reverse dc bias was applied, these diodes responded to optical signals incident on the glass surface, showing potential solar-cell application and intriguing possibilities for future optical detection structures. Devices grown via the VS method displayed better electrical properties compared to those produced via the VLS method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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