Redox Molecules for a Resonant Tunneling Barrier in Nonvolatile Memory

Autor:	Qianyin Xu, Tuo-Hung Hou, Edwin C. Kan, Shantanu R. Rajwade, T. Shaw
Rok vydání:	2012
Předmět:	Fullerene Materials science business.industry Stacking Molecular electronics Nanotechnology Flash memory Electronic Optical and Magnetic Materials Non-volatile memory Nanocrystal Optoelectronics Electrical and Electronic Engineering business Order of magnitude Quantum tunnelling
Zdroj:	IEEE Transactions on Electron Devices. 59:1189-1198
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2012.2184797
Popis:	To attain better program/erase (P/E) efficiency while maintaining retention, durable redox molecules were integrated into the flash memory gate stack to form resonant tunneling barrier by either a hybrid organic/inorganic deposition or a simple solution-based layer-by-layer (LBL) method. Compared with fullerene molecules, the proposed porphyrin has high number density and a wafer-ready LBL process. Improvement in electron retention of approximately six orders of magnitude to programming time (tR/tPE) was observed for Au nanocrystal memory with a hybrid organic-inorganic tunnel barrier. With the LBL method, the tR/tPE improved by at least two orders of magnitude for both electron and hole carriers, with the P/E cycling endurance larger than 104 cycles. Furthermore, the gate current is used to characterize the transport mechanism and study the electrical reliability of the organic layers. A better understanding of the charge storage and insulation properties of these organic barriers can improve future design integration on all-organic or hybrid molecular electronics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3668c0ad37833c30e37f1c589f9e1fe1 https://doi.org/10.1109/ted.2012.2184797 Zobrazit plný text záznamu