Epitaxial layer transfer technology and application

Autor: Takao Yonehara
Rok vydání: 2015
Předmět:
Zdroj: 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
DOI: 10.1109/s3s.2015.7333529
Popis: Epitaxial Layer and Device Layer Transfer Technologies in Si and GaAs systems are reviewed from principle, processes, devices, to application systems over decades. Various applications span from SOI-Epi wafering, PV cells and Kerf-less Si PV Epi wafers, Flexible CMOS devices, Free standing thin IC chips, CMOS Si imagers, Solid-state optical scanner and Three dimensional integrated IC. The applications have been enabled by the key roles of the separation layer of removability and thermal stability for Epitaxial and Device Layers Transfer Technology.
Databáze: OpenAIRE