An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
| Autor: | S. Balaji, Kevin Matocha, Vinayak Tilak, R. Ramakrishna Rao |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Negative-bias temperature instability
Materials science Condensed matter physics Band gap business.industry Reverse short-channel effect Mechanical Engineering Electrical engineering Charge density Electron Condensed Matter Physics Threshold voltage Condensed Matter::Materials Science chemistry.chemical_compound chemistry Mechanics of Materials Silicon carbide General Materials Science business Hot-carrier injection |
| Zdroj: | Materials Science Forum. :497-500 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.556-557.497 |
| Popis: | In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion electrons at high density of interface-traps (Dit) present at the SiC/SiO2 interface in 4H-SiC MOSFETs. In this work, we present an approach to model the interface trap density as a function of temperature that includes the effect of band gap narrowing. Using the temperature dependent trap charge density, we can estimate the variation of mobile inversion layer charge density, which in turn, explains the threshold voltage behavior with temperature in 4H-SiC MOSFETs. |
| Databáze: | OpenAIRE |
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