Optimisation of Surface Capacitance and Leakage Currents on Ion Beam Sputtered SrTiO3-Based MIM Capacitors for Above IC Technology
| Autor: | Ludivine Galéra, Laurent Ulmer, Emmanuel Defay, Gérard Tartavel, Julie Guillan, Bernard Andre, Françoise Baume |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Ion beam Annealing (metallurgy) business.industry Analytical chemistry Surface finish Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials law.invention Capacitor Control and Systems Engineering law Electrode Materials Chemistry Ceramics and Composites Breakdown voltage Optoelectronics Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | Integrated Ferroelectrics. 67:93-101 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | SrTiO3 (STO) deposition was performed by Ion Beam Sputtering on Pt/TiO2/SiO2/Si substrates. We showed that curing annealing after top electrode deposition is essential to achieve low leakage currents. A decrease of the leakage currents for thinner STO layers was observed, due to grain boundaries roughness increase with STO layer thickness as it was demonstrated by AFM experiments in the TUNA mode. Characteristics suitable for high density capacitors integrated in Above IC technology were achieved: a 20 nm-STO layer crystallized at 450°C and cured after top electrode deposition displays a surface capacitance of 36 nF/mm2, leakage currents of 10−7A/cm2 at 1 MV/cm and a breakdown voltage of 6 V. |
| Databáze: | OpenAIRE |
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