Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

Autor:	D.H. Ko, Paul Kirsch, Tae-Woo Kim, C.-S. Shin, Dae-Hyun Kim, Yd. Cho, W. Maszara, Hill Richard J, Sh. Shin, Donghyi Koh, Woo Kyu Park, Hm. Kwon
Rok vydání:	2014
Předmět:	Materials science business.industry Electrostatic integrity Gate stack Electrical engineering Optoelectronics Metalorganic vapour phase epitaxy business Electrostatics
Zdroj:	2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
DOI:	10.1109/vlsit.2014.6894351
Popis:	This paper reports on gate-last (GL) In 0.7 Ga 0.3 As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ n,eff >5,500 cm 2 /V-s at 300k). Short-channel device with L g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g m_max = 2 mS/μm at V DS = 0.5 V. This record performance is achieved by using a low D it and Al 2 O 3 /HfO 2 gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::365753fac208de8383b8af21af8797a0 https://doi.org/10.1109/vlsit.2014.6894351 Zobrazit plný text záznamu